Structural study of molten silicon by energy dispersive X-ray diffraction method
Structural study of molten silicon by energy dispersive X-ray diffraction method
复制标题
能量色散X射线衍射法研究熔融硅的结构
DOI：
10.1143/jjap.34.4889
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
S. Takeda
中科院分区：
文献类型：
--
作者：
S. Takeda
在1693 K、1733 K和1768 K三个温度下，对熔融硅进行了能量色散x射线衍射（EDXD）测量。熔融硅的三个结构因子在第一峰的高波矢量侧表现出特征肩。与角色散x射线衍射（ADXD）方法相比，第一和第二峰结构因子的振幅较小。分布函数（RDF）分析表明，前两个邻居的配位数在1693 K处为5.7(3.7+2.0)，在1733 K处为5.4(3.7+1.7)，在1768 K处为5.7（3.7+2.0）。这些数值表明，局部原子重排的温度依赖性在这里研究的温度区域是非常弱的。
Energy dispersive X-ray diffraction (EDXD) measurement on molten silicon has been carried out at three temperatures of 1693 K, 1733 K and 1768 K. Three structure factors of molten silicon show the characteristic shoulder on the higher-wave-vector side of the first peak. Amplitudes of the structure factors in the first and second peaks are smaller than those obtained by the angular dispersive X-ray diffraction (ADXD) method. The analysis of the distribution function (RDF) shows that the coordination number of the first two neighbors is 5.7(3.7+2.0) at 1693 K, 5.4(3.7+1.7) at 1733 K and 5.7(3.7+2.0) at 1768 K. These values suggest that the temperature dependence of the local atomic rearrangement is very weak in the temperature region investigated here.