Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
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DOI：
10.1002/adfm.202204760
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发表时间：
2022-09
影响因子：
19
通讯作者：
Lili Zhang;Zhe Wang;Junwei Zhang;Bin Chen;Zhaoming Liang;Xiangning Quan;Yudi Dai;Junfeng Huang;Yantao Wang;S. Liang;Mingsheng Long;M. Si;Feng Miao;Yong Peng
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作者：
Lili Zhang;Zhe Wang;Junwei Zhang;Bin Chen;Zhaoming Liang;Xiangning Quan;Yudi Dai;Junfeng Huang;Yantao Wang;S. Liang;Mingsheng Long;M. Si;Feng Miao;Yong Peng
具有可调电子特性的半导体二维过渡金属二硫属化物（2D TMD）是开发下一代先进电子/光电器件的基本先决条件。然而，通过双极性从本征n型到p型的单层MoS2的可控且准连续的载流子极性调节仍然是一个挑战。在此，提出了通过钼（Mo）与钒（V）原子的替代掺杂来准连续调整单层MoS2的载流子极性。通过球差校正扫描透射电子显微镜（Cs-STEM）表征的真实空间中的原子分布表明，V原子随机取代单层MoS2中的Mo，其掺杂浓度可以在0.7至约10 at.%的宽范围内调节。电测量证实，单层 MoS2 的载流子极性可以根据 V 掺杂程度通过双极性从本征 n 型调整为 p 型，这与密度泛函理论计算一致。此外，由于具有良好的通用性，这种掺杂策略可以通过使用MoSe2作为模型材料扩展到其他单层二维TMD。
Semiconducting 2D transition metal dichalcogenides (2D TMDs) with tunable electronic properties are a fundamental prerequisite for the development of next generation advanced electronic/optoelectronic devices. However, controllable and quasi‐continuous tuning carrier polarity of monolayered MoS2 ranging from intrinsic n‐type to p‐type via ambipolarity still remains a challenge. Herein, quasi‐continuous tailoring of carrier polarity of monolayered MoS2 through substitutional doping of molybdenum (Mo) with vanadium (V) atoms is presented. Atomic distribution in real space characterized by spherical aberration‐corrected scanning transmission electron microscopy (Cs‐STEM) reveals that the V atoms randomly substitute Mo in monolayered MoS2, and its doping concentration can be tuned in a wide range from 0.7 to ≈10 at.%. Electrical measurements confirm that the carrier polarity of the monolayered MoS2 can be tuned from intrinsic n‐type to p‐type via ambipolarity depending on the V doping degree, consistent with the density functional theory calculations. Moreover, this doping strategy is demonstrated to extend to other monolayered 2D TMDs by using MoSe2 as a model material, owing to a good universality.