Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12
Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12
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DOI：
10.1063/1.4883898
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发表时间：
2014-06-16
影响因子：
4
通讯作者：
Saitoh, E.
中科院分区：
文献类型：
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作者：
Shiomi, Y.;Ohtani, T.;Saitoh, E.
我们研究了在铁磁绝缘体Y_3Fe_5O_（12）上生长的1.8nm厚Pt薄膜在宽温度（0.46-300 K）和磁场（-15至15 T）范围内的磁电阻和霍尔效应。在低温制度下，观察到的量子校正电导率，弱的反局域化行为中观察到的Pt膜被严重抑制时，膜连接到Y3 Fe 5 O 12。Pt膜的霍尔电阻也受到Y3 Fe 5 O 12的影响，并且在很宽的温度范围内表现出对数温度依赖性。在高场范围内的磁输运性质的显着影响的Pt和Y3 Fe 5 O 12之间的界面。(C)2014 AIP Publishing LLC.
We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K) and magnetic-field (-15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12. (C) 2014 AIP Publishing LLC.