Production of organosilicon ions for SiC epitaxy
Production of organosilicon ions for SiC epitaxy
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用于 SiC 外延的有机硅离子的生产
DOI：
10.1063/1.1150414
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发表时间：
2000
影响因子：
1.6
通讯作者：
S. Gotô
中科院分区：
文献类型：
--
作者：
M. Kiuchi;Matsumoto Takashi;K. Mimoto;T. Takeuchi;S. Gotô
研究了在硅衬底上异质外延生长SiC时，在Freeman型离子源中有机硅离子的产生。SiC外延的可能性之一是有机硅离子束的低能量沉积。该技术的优点在于有机硅离子已经具有Si和C的结合。有机硅离子通常还具有可用于沉积表面上的原子排列的偶极矩。将甲基硅烷和二甲基硅烷引入Freeman型离子源中并放电进行电离。由于断裂，产生甲基硅烯离子和甲基硅离子。对离子进行加速和质量选择，以产生明确定义的离子束。通过等离子体监测器测量的能量分布为±1 eV。利用该离子束，成功地在Si上异质外延生长了3C-SiC。
The production of organosilicon ions in a Freeman-type ion source were studied for SiC heteroepitaxial growth on a Si wafer. One of the possibilities for SiC epitaxy is a low energy deposition of an organosilicon ion beam. The advantage of this technique is that the organosilicon ion already has a binding of Si and C. The organosilicon ion usually also has a dipole moment which is useful for atomic arrangement on a depositing surface. Methylsilane and dimethylsilane were introduced in a Freeman-type ion source and discharged for ionization. Because of fragmentation, methylsilylene ions and methylsilicenium ions were produced. The ions were accelerated and mass selected in order to create a well defined ion beam. The energy distribution, measured by a plasma monitor, was ±1 eV. By using this ion beam, heteroepitaxitial growth of 3C-SiC on Si was successfully created.