Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
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DOI：
10.1038/nphoton.2011.253
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发表时间：
2011-12-01
期刊：
影响因子：
35
通讯作者：
Kim, Kinam
中科院分区：
文献类型：
--
作者：
Choi, Jun Hee;Zoulkarneev, Andrei;Kim, Kinam
基于氮化镓的单晶发光二极管（s- led）可以提供具有高转换效率和长工作寿命的点状光源。最近，为了克服蓝宝石衬底的尺寸限制，在硅晶片上开发了s- led。然而，为了制造更大、更便宜、更高效的平面光源，需要在非晶玻璃基板上制造高性能s- led，这仍然是一个科学挑战。在这里，我们报告了在非晶玻璃衬底上以金字塔阵列的形式制造近单晶GaN。这是通过局部异质外延在具有优先多晶形态的位限形核层上的高温、显性GaN生长实现的。在GaN金字塔阵列上形成的InGaN/GaN多量子阱具有高达52%的内部量子效率。使用这些氮化镓金字塔阵列制造的LED阵列显示出可靠和稳定的面积型电致发光，亮度为600 cd m（-2）。
Single-crystalline GaN-based light-emitting diodes (s-LEDs) on crystalline sapphire wafers can provide point-like light sources with high conversion efficiency and long working lifetimes. Recently, s-LEDs on silicon wafers have been developed in efforts to overcome the size limitations of the sapphire substrate. However, to create larger, cheaper and efficient flat light sources, the fabrication of high-performance s-LEDs on amorphous glass substrates would be required, which remains a scientific challenge. Here, we report the fabrication of nearly single-crystalline GaN on amorphous glass substrates, in the form of pyramid arrays. This is achieved by high-temperature, predominant GaN growth on a site-confined nucleation layer with preferential polycrystalline morphology through local hetero-epitaxy. InGaN/GaN multiple-quantum wells formed on the GaN pyramid arrays exhibit a high internal quantum efficiency of 52%. LED arrays fabricated using these GaN pyramid arrays demonstrate reliable and stable area-type electroluminescent emission with a luminance of 600 cd m(-2).