Phase control of electron population, absorption, and dispersion properties of a semiconductor quantum well
Phase control of electron population, absorption, and dispersion properties of a semiconductor quantum well
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DOI：
10.1103/physrevb.73.233305
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发表时间：
2006-06
影响因子：
3.7
通讯作者：
J. Dynes;E. Paspalakis
中科院分区：
文献类型：
--
作者：
J. Dynes;E. Paspalakis
我们证明了形成三能级级联结构的非对称半导体量子阱可以由激光场的相对相位及其二次谐波控制。三个子带中的电子居数和探针的吸收/色散光谱与相位密切相关。例如，仅通过改变两个场的相对相位，就可以发现上下子带之间的电子反转以及光谱从吸收到增益的变化。
We show that an asymmetric semiconductor quantum well that forms a three-level cascade configuration can be controlled by the relative phase of a laser field and its second harmonic. The electron population in the three subbands and the probe absorption/dispersion spectra are crucially phase dependent. As an example, electron inversion between the upper and lower subbands and change of the spectrum from absorption to gain is found by solely varying the relative phase of the two fields.