Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot
Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot
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DOI：
10.1103/physrevlett.108.107401
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发表时间：
2012-03-05
影响因子：
8.6
通讯作者：
Warburton, R. J.
中科院分区：
文献类型：
--
作者：
Houel, J.;Kuhlmann, A. V.;Warburton, R. J.
我们通过在附近自组装的量子点上的激光光谱学来探测半导体中的局部电荷涨落。我们证明了在单电荷水平下量子点对局域环境的变化是敏感的。通过控制局域缺陷的电荷态，我们能够以+/-5 nm的分辨率推断缺陷到量子点的距离。结果识别和量化了常用光场效应器件中电荷噪声的主要来源。
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.