Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
复制标题
DOI：
10.1063/1.2363145
复制
发表时间：
2006-10
影响因子：
4
通讯作者：
Hongliang Lu;Liang Sun;S. Ding;Min Xu;David-Wei Zhang;Li-Kang Wang
中科院分区：
文献类型：
--
作者：
Hongliang Lu;Liang Sun;S. Ding;Min Xu;David-Wei Zhang;Li-Kang Wang
采用原子层沉积法分别在经HF清洗和NH3等离子体处理的GaAs表面沉积了Al 2 O3薄膜。用于Al 2 O3膜的前体是三甲基铝和水。通过C-V测量、高分辨透射电子显微镜和X射线光电子能谱研究了NH3等离子体预处理对Al 2 O3-ScinGaAs界面电学和结构性质的影响。C-V测试结果表明，经过NH3等离子体预处理后，薄膜的电学性能得到了改善。X射线光电子能谱分析证实，GaAs氧化物和元素砷大大减少，GaAs表面可以有效地保护在NH3等离子体预处理和原子层沉积的Al 2 O3。
Al2O3 thin films were deposited by atomic layer deposition on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are trimethylaluminum and water. Effects of NH3 plasma pretreatment on the electrical and structural properties of Al2O3∕GaAs interface were investigated by C-V measurements, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy measurements. The C-V measurements showed that the electrical property is improved after NH3 plasma pretreatment. X-ray photo electron spectroscopy analyses confirmed that GaAs oxides and elemental As are greatly decreased and the GaAs surface can be efficiently protected during NH3 plasma pretreatment and atomic layer deposition of Al2O3.