Experimental Demonstration of a Nonvolatile SRAM with Ferroelectric HfO2 Capacitor for Normally Off Application
Experimental Demonstration of a Nonvolatile SRAM with Ferroelectric HfO2 Capacitor for Normally Off Application
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用于常断应用的具有铁电 HfO2 电容器的非易失性 SRAM 的实验演示
DOI：
10.1109/jeds.2018.2800090
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
and Toshiro Hiramoto
中科院分区：
文献类型：
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作者：
Masaharu Kobayashi;Nozomu Ueyama;Kyungmin Jang;and Toshiro Hiramoto
为了实现超低功耗物联网（IoT）边缘设备，由于物联网设备在间歇模式下的活动非常小，因此必须抑制待机泄漏电流。实现超低功耗的方法之一通常是通过利用非易失性存储器来关闭计算。在发现与CMOS集成兼容的hfo2中的铁电性后，铁电性非易失性存储器被重新研究。在本文中，我们提出，设计和制造了一个具有两个电容器的简单结构的铁电hfo2电容器集成的非易失性SRAM。已经演示了基本的存储和召回操作。该器件技术将为超低功耗物联网应用开辟新的路径。
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode. One of the approaches for ultralow power consumption is normally off computing by utilizing nonvolatile memory. After the discovery of ferroelectricity in HfO2which is compatible to CMOS integration, ferroelectric nonvolatile memory has been revisited. In this paper, toward normally off computing, we have proposed, designed, and fabricated nonvolatile SRAM integrated with ferroelectric HfO2capacitor in a simple architecture with two capacitors. Fundamental store and recall operation have been demonstrated. This device technology will open a new path for ultralow power IoT application.