Recent developments in rapid thermal processing
Recent developments in rapid thermal processing
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快速热处理的最新进展
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
A. Fiory
中科院分区：
文献类型：
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作者：
A. Fiory
在最高温度下具有短停留时间的快速热退火（RTA）与离子注入一起用于在互补金属氧化物半导体（CMOS）Si处理中形成浅结和多晶硅栅电极。晶圆由电灯或稳定的热源加热，晶圆快速转移。先进的方法使用“尖峰退火”，其中高温斜坡率用于加热和冷却，同时还将峰值温度下的停留时间最小化到标称零。需要快速热循环来减少瞬态增强扩散（TED）和掺杂剂的热失活的不良影响。由于结型对退火温度敏感，尖峰退火的挑战是保持整个晶圆的温度均匀性和晶圆间的可重复性。多灯系统使用阵列式温度传感器用于各个控制区域。其他方法依赖于被设计用于均匀晶片加热的处理室。一般来说，精密的技术，精确的温度测量和控制的发射率补偿红外测温法是必需的，因为处理后的硅晶片表现出明显的变化，发射率。
Rapid thermal annealing (RTA) with a short dwell time at maximum temperature is used with ion implantation to form shallow junctions and polycrystalline-Si gate electrodes in complementary, metal-oxide semiconductor (CMOS) Si processing. Wafers are heated by electric lamps or steady heat sources with rapid wafer transfer. Advanced methods use “spike anneals,” wherein high-temperature ramp rates are used for both heating and cooling while also minimizing the dwell time at peak temperature to nominally zero. The fast thermal cycles are required to reduce the undesirable effects of transient-enhanced diffusion (TED) and thermal deactivation of the dopants. Because junction profiles are sensitive to annealing temperature, the challenge in spike annealing is to maintain temperature uniformity across the wafer and repeatability from wafer to wafer. Multiple lamp systems use arrayed temperature sensors for individual control zones. Other methods rely on process chambers that are designed for uniform wafer heating. Generally, sophisticated techniques for accurate temperature measurement and control by emissivity-compensated infrared pyrometry are required because processed Si wafers exhibit appreciable variation in emissivity.