Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
复制标题
DOI：
10.1016/j.infrared.2011.11.003
复制
发表时间：
2012-01-01
影响因子：
3.3
通讯作者：
Krier, A.
中科院分区：
文献类型：
--
作者：
Das, S. K.;Das, T. D.;Krier, A.
我们报告的光致发光（PL）的第一次观察到从稀铋化物合金GaSbBi。用液相外延技术在GaSb（100）衬底上生长外延层，获得了近红外（λ = 1.6 μ m）范围的光致发光。掺入0.2，0.3和0.4原子%的Bi的层的结果中的带隙能量的减少高达40毫电子伏，以及从样品的发光的增加。结构分析证实了Bi的成功掺入与晶格参数的增加一致。拉曼光谱测量表明振动模式，由于镓铋以及自由铋原子驻留在间隙空间。(C)2011 Elsevier B.V.保留所有权利。
We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.