Open Issues in SiC Bulk Growth

Open Issues in SiC Bulk Growth
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SiC 批量生长中的未决问题

DOI：
10.4028/www.scientific.net/msf.778-780.3
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发表时间：
2014
期刊：
Materials Science Forum
影响因子：
--
通讯作者：
T. Ouisse
T. Ouisse
中科院分区：
--
文献类型：
--
作者：
D. Chaussende;K. Ariyawong;N. Tsavdaris;M. Seiß;Y. Shin;J. Dedulle;R. Madar;E. Sarigiannidou;Joseph La Manna;O. Chaix;T. Ouisse

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在本文中，SiC块体生长过程的概述给出了一个特别关注的最新结果与生长和建模。此外，即使SiC生长是一个非常古老的话题，现在它被认为是一个“工业发展问题”，我们将表明，仍然有许多与其晶体生长相关的基础和技术重要性的未决问题。将更具体地讨论工艺化学和表面机制。
In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an « industrial development problem », we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.