Soft X-Ray Spectroscopy of Highly Charged Silicon Ions in Dense Plasmas
Soft X-Ray Spectroscopy of Highly Charged Silicon Ions in Dense Plasmas
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DOI：
10.1086/587172
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发表时间：
2008-03
期刊：
影响因子：
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通讯作者：
G. Liang;G. Zhao;J. Zhong;Y. Li;Y. Liu;Q. Dong;X. Yuan;Z. Jin;J. Zhang
中科院分区：
文献类型：
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作者：
G. Liang;G. Zhao;J. Zhong;Y. Li;Y. Liu;Q. Dong;X. Yuan;Z. Jin;J. Zhang
Rich soft X-ray emission lines of highly charged silicon ions (Si VI-Si XII) were observed by irradiating an ultraintense laser pulse with width of 200 fs and energy of ~90 mJ on the solid silicon target. The high-resolution spectra of highly charged silicon ions with full width at half-maximum (FWHM) of ~0.3-0.4 Å is analyzed in the wavelength range of 40-90 Å. The wavelengths of 53 prominent lines are determined with statistical uncertainties of up to 0.005 Å. Collisional-radiative models were constructed for Si VI-Si XII ions, which satisfactorily reproduce the experimental spectra and help in the line identification. Calculations at different electron densities reveal that the spectra of dense plasmas are more complicated than the spectra of thin plasmas. A comparison with the Kelly database reveals a good agreement for most peak intensities and differences for a few emission lines.
