Magnetron sputtering deposition of GeSe thin films for solar cells
Magnetron sputtering deposition of GeSe thin films for solar cells
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太阳能电池用GeSe薄膜的磁控溅射沉积
DOI：
10.1016/j.solener.2018.10.030
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发表时间：
2018-12-01
期刊：
影响因子：
6.7
通讯作者：
Huang, Zhigao
中科院分区：
文献类型：
--
作者：
Chen, Binwen;Chen, Guilin;Huang, Zhigao
硒化锗（GeSe）是一种地球上含量丰富、毒性较低的Ⅳ-Ⅵ族硫属化合物，由于其优异的光学和电学性能，作为一种潜在的光吸收材料受到越来越多的关注。本文提出了一种简单有效的磁控溅射方法，利用GeSe合金靶制备GeSe前驱体薄膜。随后，在真空气氛中对所沉积的样品进行后退火。系统研究了不同退火温度对薄膜结晶度、形貌和相变的影响。结果表明，少量GeSe 2杂质在400 ℃下自分解，得到了相纯、均匀的GeSe薄膜。最后，制备了开路电压为220 mV，功率转换效率为0.05%的FTO/CdS/GeSe/C-Ag太阳电池原型，表明了溅射法制备GeSe薄膜作为低成本太阳电池的潜力。
Germanium selenide (GeSe), a IV-VI chalcogenide containing earth-abundant and low-toxic elements, has attracted increasing interest as a potential absorber material for photovoltaics due to its excellent optical and electrical properties. In this work, a simple and effective magnetron sputtering method was proposed to deposite GeSe precursor thin films using GeSe alloy target. Subsequently, the as-deposited samples were post-annealed in vacuum atmosphere. The effects of different annealing temperatures on crystallinity, morphology and phase transformation of the as-prepared films were systematically investigated. It has been revealed that phase-pure and uniform GeSe thin films were obtained through the self-decomposition of slight GeSe2 impurity at 400 degrees C. Finally, a prototypical FTO/CdS/GeSe/C-Ag solar cell with 220 mV open circuit voltage and 0.05% power conversion efficiency was fabricated, which suggests the potential of sputtering processed GeSe thin film for low cost solar cell.