Improvement of orientation of planar cholesteric liquid crystal by rapid thermal processing

Improvement of orientation of planar cholesteric liquid crystal by rapid thermal processing
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DOI:
10.1063/1.2913686
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发表时间:
2008-04
影响因子:
4
通讯作者:
R. Ozaki;T. Shinpo;H. Moritake
R. Ozaki;T. Shinpo;H. Moritake
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
R. Ozaki;T. Shinpo;H. Moritake

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我们证明了快速热处理的平面液晶(CLC)的取向的改善。快速热退火和冷却减少了平面CLC中的取向缺陷的数量。退火温度强烈影响改善取向所需的处理循环次数,并且有效退火温度范围非常窄。在处理过的细胞中,散射减少,透射光谱中出现尖锐的带边。所提出的方法适用于具有各种热性质的手性掺杂剂。通过这种方法,获得了厚度大于100μm的均匀平面CLC电池。
We demonstrate the improvement of the orientation of a planar cholesteric liquid crystal (CLC) by rapid thermal processing. Rapid thermal annealing and cooling reduce the number of orientation defects in the planar CLC. The annealing temperature strongly affects the number of treatment cycles required for improved orientation and the effective annealing temperature range is very narrow. In a treated cell, scattering is reduced and sharp band edges appear in the transmission spectrum. The proposed method is applicable to chiral dopants having various thermal properties. Through this method, a uniform planar CLC cell with a thickness greater than 100μm is achieved.