Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
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DOI：
10.1109/ted.2016.2526685
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发表时间：
2016-02
影响因子：
3.1
通讯作者：
Xinbo Zou;Xu Zhang;W. Chong;C. Tang;K. Lau
中科院分区：
文献类型：
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作者：
Xinbo Zou;Xu Zhang;W. Chong;C. Tang;K. Lau
垂直注入发光二极管（VLED）的制造和演示的机械刚性和柔性衬底上使用GaN-Si外延层和成本效益的无Au Cu/Sn键合方法。在500 μm × 500 μm VLED和Si（100）载流子之间加一层反射镜后，在300 mA的驱动电流下，VLED的光功率可达134 mW。在1-A/cm 2电流注入密度下，峰值壁插效率为23%。由于金属和Si载体的优异散热性，VLED结温在350 mA/mm 2的工作电流密度下测得仅为47.5°C，并且每增加1 mA电流增加0.27°C。从刚性基板上剥离后，40 μ m厚的Cu/Sn/Cu键合层还可以用作处理基板，将LED薄膜粘贴到柔性基板上，包括塑料和纸张。这种独立的VLED结构在各种衬底上都表现出了原有的I-V特性和高亮度。结果证明了使用GaN-on-Si外延层和Cu/Sn/Cu键合用于广泛应用的可行性，包括低成本固态照明和柔性照明。
Vertical-injection light-emitting diodes (VLEDs) were fabricated and demonstrated on mechanically rigid and flexible substrates using GaN-on-Si epilayers and a cost-effective Au-free Cu/Sn bonding method. With a mirror layer between the VLEDs and the receptor Si(100) carrier, 500 μm × 500 μm VLEDs emit up to 134-mW optical power at a drive current of 300 mA. The peak wall-plug efficiency was 23% at 1-A/cm2 current injection density. Due to excellent heat dissipation of the metal and Si carrier, the VLED junction temperature was measured to be only 47.5°C at a working current density of 350 mA/mm2 and increased by 0.27°C per 1-mA current increment. After release from the rigid substrate, the 40-μm-thick Cu/Sn/Cu bonding layer can also work as a handling substrate to paste LED thin films onto flexible substrates, including plastic and paper. The self-contained VLED structure exhibited the original I-V characteristics and high brightness on various substrates. The results attest to the feasibility of using GaN-on-Si epilayers and Cu/Sn/Cu bonding for a wide range of applications, including low-cost solid-state lighting and flexible illuminations.