Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
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通过氢化物气相外延和空隙辅助分离制造块状 GaN 晶体的热和光学特性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
T. Mishima
中科院分区：
文献类型：
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作者：
Y. Oshima;Takayuki Suzuki;Takeshi Eri;Y. Kawaguchi;Kazutoshi Watanabe;M. Shibata;T. Mishima
利用氢化物气相外延制备的高质量GaN单晶，研究了与GaN相关的基本材料参数，这些参数对发光二极管和激光二极管等器件的设计具有重要意义。测量了C[0001]、A[112¯0]和M[101¯0]轴（αC、αA和αM）的热膨胀系数（298 ~ 573k）。在整个测量温度范围内，每个方向的热膨胀近似地与温度成正比。高温范围内的热膨胀系数αC(573K)=7.2±0.02×10−6∕K, αA(573K)=5.7±0.2×10−6∕K, αM(573K)=5.8±0.2×10−6∕K与报道值较为接近，而低温范围内沿C轴的热膨胀系数αC(298K)=5.3±0.02×10−6∕K明显大于报道值。平行于和垂直于C轴的热导率几乎相等。
The fundamental material parameters associated with GaN, which are important for the design of devices such as light-emitting diodes and laser diodes, were investigated using large high-quality GaN single crystals fabricated through hydride vapor phase epitaxy using the void-assisted separation method. The thermal-expansion coefficients (298–573K) along the C[0001], A[112¯0], and M[101¯0] axes (αC, αA, and αM) were measured. Thermal expansion in each direction, approximately proportional to the temperature, was observed throughout the measured temperature range. Although the thermal-expansion coefficients in the high-temperature range, i.e., αC(573K)=7.2±0.02×10−6∕K, αA(573K)=5.7±0.2×10−6∕K, and αM(573K)=5.8±0.2×10−6∕K,were relatively close to the reported values, the thermal-expansion coefficients along the C axis in the low-temperature range, i.e., αC(298K)=5.3±0.02×10−6∕K, was significantly larger than the reported values. Thermal conductivities parallel and perpendicular to the C axis were almost the ...