CVD-Enabled Graphene Manufacture and Technology.
CVD-Enabled Graphene Manufacture and Technology.
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DOI：
10.1021/acs.jpclett.5b01052
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发表时间：
2015-07-16
期刊：
影响因子：
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通讯作者：
Weatherup RS
中科院分区：
文献类型：
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作者：
Hofmann S;Braeuninger-Weimer P;Weatherup RS
集成制造可以说是基于石墨烯和其他2D材料的技术开发中最具挑战性的任务，特别是对于“电子级”大面积薄膜的工业需求。为了在单层水平上控制这些材料的结构和性质，与现有的薄膜或块状材料相比，需要将它们的成核、生长和界面连接理解到前所未有的细节水平。化学气相沉积（CVD）已成为将石墨烯和2D材料薄膜开发为工业设备材料的最通用和最有前途的技术，本展望概述了最近的进展，趋势和新兴的CVD加工途径。一个关键的焦点是新兴的理解的基本生长机制，特别是所需的催化生长基板，它汇集了在多相催化和经典的晶体/薄膜生长领域的最新进展的作用。
Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for “electronic-grade” large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth.