Synthesis and properties of thieno[3,2-b]thiophene derivatives for application of OFET active layer
Synthesis and properties of thieno[3,2-b]thiophene derivatives for application of OFET active layer
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用于OFET活性层的噻吩并[3,2-b]噻吩衍生物的合成及性能
DOI：
10.1002/hc.21059
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发表时间：
2013
影响因子：
0.3
通讯作者：
S.
中科院分区：
文献类型：
--
作者：
Ito;H.;Yamamoto;T.;Yoshimoto;N.;Tsushima;N.;Muraoka;H.;Ogawa;S.
通过短步骤合成了一系列含苯乙烯基的硫代[3，2-b]噻吩衍生物，并用紫外-可见吸收光谱和循环伏安法对其结构进行了表征。基于这些结果，我们发现在末端的苯乙烯基上引入长链烷基基导致了比未烷基化的苯乙烯基取代分子更窄的HOMO-LUMO能级和更高的HOMO能级。采用真空镀膜工艺制备了以这些衍生物为有源层的有机场效应晶体管(OFET)器件。结果表明，这些器件具有较高的空穴迁移率，最高可达3.5×10−2cm2/vs。这些器件也表现出良好的稳定性，即它们在空气中100天的迁移率不会下降。因此，这些事实表明，引入长链烷基苯乙烯基是提高场效应管空穴迁移率的有效途径。©2012 Wiley期刊，Inc.《异质原子化学》24：25-35,2013；在线查看本文，网址为wileyonlinelibrary.com。DOI 10.1002/hc.21059
A series of thieno[3,2‐b]thiophene derivatives having styryl groups were synthesized via short steps and characterized by UV–vis absorption spectra and cyclic voltammetry. Based on these results, we found that the introduction of long chain alkyl groups to the terminal styryl groups leads to narrower HOMO–LUMO gaps and higher HOMO energy levels than the unalkylated styryl substituted molecules. Organic field–effect transistor (OFET) devices using these derivatives as the active layer were fabricated by a vacuum deposition process. It was demonstrated that these devices showed a relatively high hole mobility up to 3.5 × 10−2cm2/Vs. These devices also showed a good stability, namely their mobilities did not decrease over 100 days in air. Therefore, these facts suggested that the introduction of long‐chain alkylated styryl groups is an effective way to improve the hole mobilities in OFETs. © 2012 Wiley Periodicals, Inc. Heteroatom Chem 24:25–35, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/hc.21059