Silicon Pressure Sensor for in Situ Pressure Measurement in a Pressurized Superfluid Helium Environment
Silicon Pressure Sensor for in Situ Pressure Measurement in a Pressurized Superfluid Helium Environment
复制标题
用于加压超流氦环境中原位压力测量的硅压力传感器
DOI：
10.1007/978-1-4757-9047-4_97
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
T. Nakamoto
中科院分区：
文献类型：
--
作者：
T. Haruyama;N. Kimura;T. Nakamoto
研究了一种硅压阻式压力传感器在加压超流氦环境下的现场压力测量方法。据报道，丰田机械有限公司生产的小型压力传感器PD116可用于在低温至6 K时测量最大压力为3mpa的现场压力传感器。它在300至6 K之间的低温灵敏度系数约为200 ppm/K。为了评估PD116传感器在增压超流氦环境中的适用性，将其设置在能够提供超流氦环境的特定低温恒温器中。在4.2 K和2.0 K的压力范围为100 kPa ~ 170 kPa时，测量了传感器的特性。在传感器上施加1 mA的驱动电流，以便将散热限制在1 mW以下。传感器输出电压的压力依赖性也表明温度低于4.2 K时线性度高。本研究的实验结果清楚地表明，该传感器可能用于加压超流氦环境中的现场压力测量。
A silicon piezo-resistive pressure sensor is investigated for possiblein situpressure measurement in a pressurized superfluid helium environment. A small pressure sensor, PD116, from Toyoda Machine Works Ltd, has been reported as an applicable sensor forin situpressure measurement up to the maximum pressure of 3 MPa at cryogenic temperatures down to 6 K. It has a low temperature coefficient of sensitivity around 200 ppm/K between 300 and 6 K. In order to evaluate the applicability in a pressurized superfluid helium environment, the PD116 sensor was set in a specific cryostat which can provide superfluid helium environment. The characteristics of the sensor were measured for the pressure range from 100 kPa to 170 kPa at 4.2 K and 2.0 K. A driving current of 1 mA was applied to the sensor in order to limit heat dissipation to less than 1 mW. The pressure dependence of the output voltage of the sensor also indicates high linearity at temperatures lower than 4.2 K. The experimental results of this study clearly indicate a possible use of this sensor forin situpressure measurement in a pressurized superfluid helium environment.