The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film
The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film
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DOI：
10.1016/j.jeurceramsoc.2012.04.030
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发表时间：
2012-09
影响因子：
5.7
通讯作者：
Ming-Wei Wu;Day-Shan Liu;Yu Su
中科院分区：
文献类型：
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作者：
Ming-Wei Wu;Day-Shan Liu;Yu Su
AZO薄膜由于其优异的性能被认为是ITO的潜在替代品。为了优化AZO薄膜的性能，必须明确靶材与薄膜之间的关系。因此，溅射靶材的性能特别是电学性能是如何随烧结参数的变化而变化的研究很少得到重视。为了开发高质量的AZO和ZnO靶材，本研究对靶材的致密性、微观结构和电学性能进行了研究。结果表明：在空气中1100℃烧结后，ZnO中添加2wt%的al2o3会导致致密化延迟，形成znal2o4相，电性能较差；然而，在1200°C或更高温度下烧结后，al2o3添加剂使晶粒尺寸更细，烧结密度更高，电性能更好。一般来说，AZO靶也比AZO薄膜表现出更高的霍尔迁移率和更低的载流子密度。
AZO films are regarded as a potential substitute for ITO due to their excellent performance. To optimize the performances of AZO films, the correlation between the target and film must be clearly clarified. Therefore, how the properties, particularly the electrical ones, of the sputtering targets evolve with the sintering parameters are rarely highlighted. To develop high-quality AZO and ZnO targets, the densification, microstructure, and electrical properties of the targets were investigated in this study. The results showed that after sintering at 1100°C in air, the 2wt% Al2O3additive in ZnO results in retarded densification, the formation of ZnAl2O4phase, and inferior electrical properties. However, after sintering at 1200°C or higher temperatures, the Al2O3additive leads to finer grain size, higher sintered density, and better electrical properties. In general, the AZO targets are also found to exhibit higher Hall mobility and lower carrier density than the AZO films do.