High performance of potassium n-doped carbon nanotube field-effect transistors
High performance of potassium n-doped carbon nanotube field-effect transistors
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DOI：
10.1063/1.1737062
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发表时间：
2004-05-03
影响因子：
4
通讯作者：
Knoch, J
中科院分区：
文献类型：
--
作者：
Radosavljevic, M;Appenzeller, J;Knoch, J
我们描述了一种从大带隙碳纳米管制备高性能垂直尺度掺n场效应管的可靠技术。这些器件的阈值电压在技术上相关的范围内可调(-1.3V小于或等于V(Th)小于或等于0.5V)，并且在导通状态下可以携带高达5-6微安的电流。我们通过暴露在钾(K)蒸气中和高真空中的器件退火来实现这种性能。这种处理具有双重作用：(I)通过纳米管体掺杂(高达约0.6e(-)/nm)，可控制地使V-th向负栅偏压移动，以及(Ii)使导通电流增加1-2个数量级。这种电流增强是通过降低外部器件电阻实现的，这是由于K金属与掺杂纳米管沟道之间更紧密的接触，以及接触处肖特基势垒高度的潜在降低。(C)2004年美国物理研究所。
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3 Vless than or equal toV(th)less than or equal to0.5 V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a twofold effect to: (i) controllably shift V-th toward negative gate biases via bulk doping of the nanotube (up to about 0.6e(-)/nm), and (ii) increase the on-current by 1-2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact. (C) 2004 American Institute of Physics.