Defect interaction summary between edge dislocations and <112>-axis symmetric tilt grain boundaries in copper on activation barriers and critical stresses
Defect interaction summary between edge dislocations and <112>-axis symmetric tilt grain boundaries in copper on activation barriers and critical stresses
复制标题
刃位错和缺陷相互作用总结
DOI:
10.1016/j.ijplas.2021.103153
复制
发表时间:
2022
影响因子:
9.8
通讯作者:
Shibutani Yoji
中科院分区:
文献类型:
--
作者:
Li Li;Liu Lijun;Shibutani Yoji
The interactions between edge dislocations and <112>-axis symmetric tilt grain boundaries (GBs) in copper have been investigated by atomistic simulations. Molecular dynamics simulations and the nudged elastic band method were implemented to investigate the atomistic reaction between the two defects and the activation energy required to trigger such an event in various stress or strain states. The results showed that although different GBs were introduced, the most common scenarios were dislocation absorption into the GB and transmission through the GB. In most cases, the leading partial dislocation was absorbed into the GB once these two crystallographic defects impacted. In contrast, the trailing partial dislocation played a crucial role in determination of the threshold reaction stress. From transition state theory, the reaction energy barriers showed a linear relationship with the resolved shear stress or strain state. The constant activation volume was in the range 22–53b3, where b is the Burgers vector. Furthermore, the corresponding strain rate sensitivities obtained through the activation volumes showed good agreement with the experiment data.