A 70 mΩ Intelligent High Side Switch with Full Diagnostics
A 70 mΩ Intelligent High Side Switch with Full Diagnostics
复制标题
具有全面诊断功能的 70 mΩ 智能高边开关
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
F. Pulvirenti
中科院分区：
文献类型：
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作者：
R. Gariboldi;F. Pulvirenti
介绍了一种采用 BCD（双极、CMOS、DMOS）技术开发的用于工业、汽车和计算机应用的新型智能电源开关。它由一个以高侧配置连接的片上 70 mΩ 功率 DMOS 晶体管组成，其驱动器使该器件几乎坚不可摧，适合驱动输出电流为 2.5 A 的任何类型的负载。如果负载是感性负载，内部电压钳位可在电源电压下快速消磁至 55 V。该器件包括新颖的驱动器结构、完全集成的电荷泵电路及其振荡器。这些电路经过专门设计，可通过精确控制输出电压斜率和减少由电荷泵本身引起的输出电压纹波来减少电磁干扰 (EMI)（多项专利正在申请中）。创新的开路负载电路可以高精度检测开路负载状况（在温度范围内为 2 至 4 mA，包括工艺范围）。静态电流也降低至 600 uA。当发生以下故障情况时，可以在芯片的外部连接处进行 CPU 反馈诊断：负载开路；输出对电源电压短路；过载或输出对地短路；温度过高；欠电压供电。
A new smart power switch for industrial, automotive and computer applications developed in BCD (Bipolar, CMOS, DMOS) technology is described. It consists of an on-chip 70 mΩ power DMOS transistor connected in high side configuration and its driver makes the device virtually indestructible and suitable to drive any kind of load with an output current of 2.5 A. If the load is inductive, an internal voltage clamp allows fast demagnetization down to 55 V under the supply voltage. The device includes novel structures for the driver, the fully integrated charge pump circuit and its oscillator. These circuits have specifically been designed to reduce ElectroMagnetic Interference (EMI) thanks to an accurate control of the output voltage slope and the reduction of the output voltage ripple caused by the charge pump itself (several patents pending). An innovative open load circuit allows the detection of the open load condition with high precision (2 to 4 mA within the temperature range and including process spreads). The quiescent current has also been reduced to 600 uA. Diagnostics for CPU feedback is available at the external connections of the chip when the following fault conditions occur: open load; output short circuit to supply voltage; overload or output short circuit to ground; over temperature; under voltage supply.