Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
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DOI：
10.1063/1.3675453
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发表时间：
2012-01
影响因子：
4
通讯作者：
J. Xue;Jincheng Zhang;Y. Hou;Haosen Zhou;Jinfeng Zhang;Y. Hao
中科院分区：
文献类型：
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作者：
J. Xue;Jincheng Zhang;Y. Hou;Haosen Zhou;Jinfeng Zhang;Y. Hao
通过脉冲金属有机化学气相沉积（PMOCVD）在蓝宝石上生长了高质量、近乎晶格匹配的InAlN/GaN/InAlN/GaN双沟道异质结构。实现了1414 cm²/Vs的高电子迁移率以及2.55×10¹³ cm⁻²的二维电子气密度。我们将其归因于高质量的PMOCVD生长的InAlN势垒，此外，还归因于两个InAlN势垒之间新的GaN层生长，它包括一个薄的GaN间隔层以防止在后续生长过程中铟的重新分布和铟团簇的形成，以及一个相对较厚的GaN沟道以提高电子迁移率。在这些具有0.8μm长栅极的异质结构上制造的高电子迁移率晶体管表现出906 mA/mm的最大漏极电流和186 mS/mm的跨导。
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD). High electron mobility of 1414 cm2/Vs was achieved along with a two-dimensional-electron-gas density of 2.55 × 1013 cm−2. We attribute it to the high quality PMOCVD-grown InAlN barriers and, additionally, to the novel GaN layer growth between two InAlN barriers, which consists of a thin GaN spacer to prevent indium-redistribution and indium-cluster formation during the subsequent growth and a relatively thick GaN channel to enhance electron mobility. High-electron-mobility-transistors fabricated on these heterostructures with 0.8-μm-length gate exhibit a maximum drain current of 906 mA/mm and a transconductance of 186 mS/mm.