An Atomic Frequency Comb Memory in Rare-Earth-Doped Thin-Film Lithium Niobate
An Atomic Frequency Comb Memory in Rare-Earth-Doped Thin-Film Lithium Niobate
复制标题
稀土掺杂薄膜铌酸锂原子频率梳存储器
DOI：
10.1021/acsphotonics.2c01835
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发表时间：
2023
期刊：
影响因子：
7
通讯作者：
Waks, Edo
中科院分区：
文献类型：
--
作者：
Dutta, Subhojit;Zhao, Yuqi;Saha, Uday;Farfurnik, Demitry;Goldschmidt, Elizabeth A.;Waks, Edo
量子存储器是光学量子计算机和量子网络的关键组成部分。稀土离子掺杂晶体是利用原子频率梳协议实现量子存储的一种很有前途的材料。然而，目前的原子频率梳式存储器通常使用大块材料或具有大截面的波导，或者依赖于不易适应晶圆级加工的制造技术。在这里，我们展示了一个紧凑的芯片集成的原子频率梳在稀土掺杂的铌酸锂薄膜。我们的光存储器具有超过100 MHz的宽存储带宽和光存储时间长达250 ns。与离子扩散波导相比，该器件中增强的光约束导致相干控制所需的光功率降低了三个数量级。这些紧凑的原子频率梳存储器为可扩展、高效、电光可调的量子光子系统铺平了道路，该系统可以在紧凑的芯片上存储和操纵光。
Quantum memories are a key building block for optical quantum computers and quantum networks. Rare-earth ion-doped crystals are a promising material to achieve quantum memory using an atomic frequency comb protocol. However, current atomic frequency comb memories typically use bulk materials or waveguides with large cross sections or rely on fabrication techniques not easily adaptable to wafer scale processing. Here, we demonstrate a compact chip-integrated atomic frequency comb in rare-earth-doped thin-film lithium niobate. Our optical memory exhibits a broad storage bandwidth exceeding 100 MHz and optical storage time as long as 250 ns. The enhanced optical confinement in this device leads to three orders of magnitude reduction in optical power required for a coherent control as compared to ion-diffused waveguides. These compact atomic frequency comb memories pave the way toward scalable, highly efficient, electro-optically tunable quantum photonic systems that can store and manipulate light on a compact chip.