Self-assembled c-axis oriented δ-MoN thin films on Si substrates by chemical solution deposition: Growth, transport and superconducting properties
Self-assembled c-axis oriented δ-MoN thin films on Si substrates by chemical solution deposition: Growth, transport and superconducting properties
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DOI：
10.1016/j.jallcom.2017.02.084
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发表时间：
2017-05
影响因子：
6.2
通讯作者：
Hanlu Zhang;Z. Hui;Xianwu Tang;R. Wei;Jie Yang;J. Dai;W. Song;Hongmei Luo;Xuebin Zhu;Yuping Sun
中科院分区：
文献类型：
--
作者：
Hanlu Zhang;Z. Hui;Xianwu Tang;R. Wei;Jie Yang;J. Dai;W. Song;Hongmei Luo;Xuebin Zhu;Yuping Sun
氮化钼Mo-N被认为是最硬的超导金属氮化物，通常在高温高压下制备，以获得高的超导转变温度Tc。本文采用化学溶液沉积法，在NH3气氛下直接在Si衬底上沉积了具有自取向的多晶δ-MoN薄膜。所制备的δ-MoN/Si薄膜温度高于12 K。正常态电阻率服从电子-声子散射机制，可用Bloch-Grüneisen公式进行拟合。研究结果为制备大面积高Tcas的δ-MoN/Si薄膜提供了一条有效途径，对多晶δ-MoN薄膜的基本性质研究具有指导意义。
Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperatureTc. Here, polycrystallineδ-MoN thin films with self-assembledc-axis orientation are directly deposited onto Si substrates by chemical solution deposition under ambient NH3annealing atmosphere without high pressure processing. The preparedδ-MoN/Si thin films showTchigher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Grüneisen expression. The results will provide an effective route to prepare large-areaδ-MoN/Si thin films with highTcas well as a guidance to investigate the fundamental properties of polycrystallineδ-MoN thin films.