Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth
Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth
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DOI：
10.1021/cg300360h
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发表时间：
2012-05
影响因子：
3.8
通讯作者：
S. Harada;Alexander;Kazuaki Seki;Y. Yamamoto;Can Zhu;Yuta Yamamoto;S. Arai;J. Yamasaki;N. Tanaka;T. Ujihara
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文献类型：
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作者：
S. Harada;Alexander;Kazuaki Seki;Y. Yamamoto;Can Zhu;Yuta Yamamoto;S. Arai;J. Yamasaki;N. Tanaka;T. Ujihara
用透射电子显微镜和显微拉曼光谱研究了顶籽晶溶液生长过程中4H-SiC(0001)Si表面的多型转变。采用螺旋生长方法在4H-SiC(0001)面上生长了4H-、15R-和6H-碳化硅。一旦发生从4H-碳化硅到15R-或6H-碳化硅的多型转变，多型很少返回到4H-碳化硅。就在多型转变之前，观察到了层叠序列中的扰动，涉及到层错的引入。螺旋生长过程中的多型转变可以用螺旋台阶上单个双层的二维形核引起的层错复制来理解。这种多型转变模型与观察到的多型转变路径以及4H-SiC和15R-SiC界面层序的扰动符合得很好。
Polytype transformations on the 4H-SiC(0001) Si face during top-seeded solution growth have been investigated by transmission electron microscopy and micro-Raman spectroscopy. 4H-, 15R-, and 6H-SiC were grown on the 4H-SiC(0001) Si face via spiral growth. Once a polytype transformation from 4H-SiC to 15R- or 6H-SiC occurs, the polytype rarely returns to 4H-SiC. Just before the polytype transformation, a disturbance in the stacking sequence involving the introduction of stacking faults was observed. A polytype transformation during spiral growth can be understood in terms of the replication of stacking faults due to two-dimensional nucleation of a single bilayer on the spiral steps. This polytype transformation model shows good agreement with observed polytype transformation pathways as well as the disturbance in the stacking sequence at the interface between 4H-SiC and 15R-SiC.