Template-free directional growth of single-walled carbon nanotubes on a- and r-plane sapphire
Template-free directional growth of single-walled carbon nanotubes on a- and r-plane sapphire
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DOI：
10.1021/ja042544x
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发表时间：
2005-04-20
影响因子：
15
通讯作者：
Zhou, CW
中科院分区：
文献类型：
--
作者：
Han, S;Liu, XL;Zhou, CW
我们报告了在 a 平面和 r 平面蓝宝石基板上高度排列的单壁碳纳米管阵列的高通量生长。这是通过以铁蛋白作为催化剂的化学气相沉积来实现的。纳米管垂直于 [0001] 方向排列，以便在 a 平面蓝宝石上生长。它们通常有几十微米长，直径分布很窄，为 1.34 ± 0.30 nm。相比之下，在c面和m面蓝宝石上生长时，或者当使用Fe膜而不是铁蛋白作为催化剂时，没有实现取向。这种取向控制可能与碳纳米管和蓝宝石基板之间的相互作用有关，这一点得到了观察的支持，即当生长第二层纳米管时，它们遵循气流方向。这些排列的纳米管阵列可以构建可集成且可扩展的纳米管装置和系统。
We report high-throughput growth of highly aligned single-walled carbon nanotube arrays on a-plane and r-plane sapphire substrates. This is achieved using chemical vapor deposition with ferritin as the catalyst. The nanotubes are aligned normal to the [0001] direction for growth on the a-plane sapphire. They are typically tens of micrometers long, with a narrow diameter distribution of 1.34 ± 0.30 nm. In contrast, no orientation was achieved for growth on the c-plane and m-plane sapphire, or when Fe films, instead of ferritin, were used as the catalyst. Such orientation control is likely related to the interaction between carbon nanotubes and the sapphire substrate, which is supported by the observation that when a second layer of nanotubes was grown, they followed the gas flow direction. These aligned nanotube arrays may enable the construction of integrable and scalable nanotube devices and systems.