Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect
Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect
复制标题
利用霍尔效应分析非晶金属氧化物半导体薄膜晶体管的载流子迁移率
DOI：
10.1109/led.2020.2993268
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发表时间：
2020
影响因子：
4.9
通讯作者：
Kimura Mutsumi
中科院分区：
文献类型：
--
作者：
Imanishi Kota;Matsuda Tokiyoshi;Kimura Mutsumi
利用霍尔效应分析了非晶金属氧化物半导体（AOS）薄膜晶体管（TFT）中的载流子迁移率。首先，制作非晶Ga-Sn-O（a-GTO）TFT和四个电极排列成正方形的非晶Ga-Sn-O（a-GTO）TFT，测量a-GTO TFT的晶体管特性，计算场效应迁移率（μFE）。此外，使用货车der Pauw方法测量具有四个电极的a-GTO TFT的霍尔效应，并且计算霍尔迁移率（μ霍尔）。最后，发现μ FE与μHall对栅压（Vgs）的依赖关系相似，载流子迁移率（μ）随Vgs的增大而增大。总之，这表明在AOS TFT中的μ强烈地受到沟道层中的逾渗路径的影响。
Carrier mobility in an amorphous metal-oxide semiconductor (AOS) thin-film transistor (TFT) was analyzed using the Hall effect. First, an amorphous Ga-Sn-O (a-GTO) TFT and that with four electrodes arranged in a square shape are fabricated.Next, a transistor characteristic of the a-GTO TFT is measured, and field-effect mobility (μFE) is calculated. Moreover, the Hall effect of the a-GTO TFT with the four electrodes is measured using a van der Pauw method, and Hall mobility (μHall) is calculated. Finally, it is found that the dependence of μFEon the gate voltage (Vgs) is similar to that of μHall, and the carrier mobility (μ) increases as Vgs increases. In conclusion, it is suggested that μ in the AOS TFT is strongly subject to the percolation path in the channel layer.