N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
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DOI：
10.1063/1.4775736
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发表时间：
2013-01
影响因子：
3.2
通讯作者：
M. Himmerlich;Andreas Knübel;R. Aidam;L. Kirste;A. Eisenhardt;S. Krischok;J. Pezoldt;P. Schley;E. Sakalauskas;R. Goldhahn;R. Félix;J. Mánuel;F. M. Morales;D. Carvalho;T. Ben;R. García;G. Koblmüller
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文献类型：
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作者：
M. Himmerlich;Andreas Knübel;R. Aidam;L. Kirste;A. Eisenhardt;S. Krischok;J. Pezoldt;P. Schley;E. Sakalauskas;R. Goldhahn;R. Félix;J. Mánuel;F. M. Morales;D. Carvalho;T. Ben;R. García;G. Koblmüller
在这项工作中，我们分析了故意碳掺杂对以溴化碳(CBr4)为掺杂源的分子束外延生长的极性InN外延层的影响。采用霍尔效应测量、高分辨X射线衍射仪、原子力显微镜、透射电子显微镜、二次离子质谱仪、椭圆偏振光谱和X射线光电子能谱等手段研究了不同掺杂浓度对InN的电学、光学、结晶学、形态和电学性质的影响。结果表明，电子浓度随碳的掺入呈线性增加，指向n型掺杂的效应，而掺入C杂质降低了InN薄膜内的电子迁移率。这种相关性进一步反映在相关的性质上，如光学吸收的开始、等离子体激元频率、有效电子质量以及体费米能级和表面费米能级的位置。此外，..。
In this work, we have analyzed the effect of intentional carbon doping on molecular beam epitaxy grown In-polar InN epilayers using carbon bromide (CBr4) as dopant source. Hall effect measurements, high resolution X-ray diffraction, atomic force microscopy, transmission electron microscopy, secondary ion mass spectrometry, spectroscopic ellipsometry, as well as X-ray photoelectron spectroscopy were employed to characterize the influence of different dopant concentrations on the electrical, optical, crystallographic, morphological, and electronic properties of InN. It was found that the electron concentration increases linearly with the incorporation of carbon pointing towards the effect of n-type doping and that incorporated C impurities reduce the electron mobility within the InN films. This correlation is further reflected in associated properties such as the onset of optical absorption, the plasmon frequency, the effective electron mass and the position of the bulk and surface Fermi level. Furthermore,...