Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres
Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres
复制标题
DOI：
10.1038/nphoton.2011.352
复制
发表时间：
2012-03-01
期刊：
影响因子：
35
通讯作者：
Badding, John V.
中科院分区：
文献类型：
--
作者：
He, Rongrui;Sazio, Pier J. A.;Badding, John V.
其中可以在光纤本身(1-11)内产生、调制和检测光而不需要离散的光电子器件的全光纤通信网络的前景是吸引人的。然而，为了成为现实，这种方法需要将光电子材料和功能结合到二氧化硅纤维中，以创建用于执行各种任务的新型半导体-光纤混合器件。在这里，我们报告了将精确掺杂的半导体材料和高质量的整流半导体结集成到微结构光纤中，从而实现高速光纤内功能，如电信波长的光检测。这些半导体-光纤混合器件的带宽高达3 GHz，并与标准单模光纤无缝耦合。
The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself(1-11) without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.