Evidence of an energetic ion bombardment mechanism for bias-enhanced nucleation of diamond
Evidence of an energetic ion bombardment mechanism for bias-enhanced nucleation of diamond
复制标题
DOI：
10.1063/1.113621
复制
发表时间：
1995-06
影响因子：
4
通讯作者：
S. Mcginnis;M. Kelly;S. Hagstrom
中科院分区：
文献类型：
--
作者：
S. Mcginnis;M. Kelly;S. Hagstrom
研究了衬底偏压对微波等离子体化学气相沉积反应器中金刚石薄膜的偏压增强金刚石成核预处理的影响。观察到约-200 V 的临界偏压使成核密度从~104 cm-2 增强到~1010 cm-2。此外，对于与负偏压硅衬底电隔离的小硅区域，偏压条件下的成核密度低五个数量级。这些结果证实，高能阳离子对基底的轰击在偏压预处理期间的金刚石成核机制中起着重要作用。
The effect of substrate bias voltage was investigated for bias‐enhanced diamond nucleation pretreatments of diamond thin films in a microwave plasma chemical vapor deposition reactor. A critical bias voltage of approximately −200 V was observed for nucleation density enhancement from ∼104 cm−2 to ∼1010 cm−2. Furthermore, the nucleation density under bias conditions was five orders of magnitude lower for a small silicon region electrically isolated from the otherwise negatively biased silicon substrate. These results confirm that bombardment of the substrate by energetic cations plays a significant role in the diamond nucleation mechanism during bias pretreatments.