Study on Schottky AlxGa1-xN/GaN IMPATT Diodes for Millimeter-Wave Application
Study on Schottky AlxGa1-xN/GaN IMPATT Diodes for Millimeter-Wave Application
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毫米波应用肖特基 AlxGa1-xN/GaN IMPATT 二极管的研究
DOI：
10.1109/ted.2022.3192331
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发表时间：
2022-07-25
影响因子：
3.1
通讯作者：
Zhao，Shenglei
中科院分区：
文献类型：
--
作者：
Dai，Yang;Dang，Jiangtao;Zhao，Shenglei
本文提出了一种肖特基氮化铝镓（AlGaN）/GaN单漂移区（SDR）IMPATT二极管，使用AlGaN作为雪崩有源层。与GaN相比，AlGaN具有更宽的带隙和更好的击穿特性。这些特性可以显著提高器件性能。我们模拟的直流（DC）和射频（RF）性能的新结构的0.2-0.6铝成分下的毫米波波段，并与传统的GaN雪崩层IMPATT的结果进行了比较。结果表明，AlGaN雪崩层IMPATT显著提高了器件的击穿电压、射频电压和射频电流性能。此外，AlGaN雪崩层的应用将RF效率从18.16%提高到21.98%，并将RF功率从1.56 MW/cm 2提高到2.67 MW/cm 2。由于这种结构在毫米波甚至太赫兹应用中具有更大的潜力，本文为GaN基IMPATT二极管的设计提供了新的参考。
This article proposes a Schottky aluminum gallium nitride (AlGaN)/GaN single-drift-region (SDR) IMPATT diode that uses AlGaN as the avalanche active layer. Compared with GaN, AlGaN has a wider bandgap and better breakdown characteristics. These features can significantly improve the device performance. We simulated the direct current (DC) and radio frequency (RF) performances of the new structure for the 0.2–0.6 Al composition under the millimeter-wave band and compared the results with the conventional GaN avalanche layer IMPATT. The results indicate that the AlGaN avalanche layer IMPATT significantly improves the breakdown voltage, RF voltage, and RF current performances. Furthermore, the application of AlGaN avalanche layer increases the RF efficiency from 18.16% to 21.98% and increases the RF power from 1.56 to 2.67 MW/cm2. As this structure has greater potential for the millimeter wave, even terahertz application, this article brings a new reference for the design of GaN-based IMPATT diodes.