Development of Thin-Film Bending Technique Induced by Ion-Beam Irradiation
Development of Thin-Film Bending Technique Induced by Ion-Beam Irradiation
复制标题
离子束辐照薄膜弯曲技术的发展
DOI：
10.1143/apex.2.066501
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发表时间：
2009
影响因子：
2.3
通讯作者：
S. Kanemaru
中科院分区：
文献类型：
--
作者：
Tomoya Yoshida;M. Nagao;S. Kanemaru
我们提出了一种由离子束辐照诱导的薄膜弯曲技术，该技术允许制造三维器件结构和阵列，如微机电系统（MEMS）器件。它可以广泛应用于各种条件下通过非专业溅射方法沉积的材料。结果表明，与离子种类和薄膜材料无关，离子注入深度可以控制薄膜的弯曲角度。利用这种技术，可以制造出几十纳米厚的垂直直立薄膜的微米级区域。
We propose a thin-film bending technique induced by ion-beam irradiation, which allows for the fabrication of three-dimensional device structures and arrays, such as micro-electro mechanical systems (MEMS) devices. It can be applied to a wide range of materials deposited by non-specialized sputtering methods under a variety of conditions. It was found that the bending angle could be controlled by the depth of ion implantation, irrespective of the ion species or the film material. Using this technique, micron-sized regions of vertically standing thin film tens of nanometers thick could be produced.