Nitrogen-induced decrease of the electron effective mass in GaAs1-xNx thin films measured by thermomagnetic transport phenomena
Nitrogen-induced decrease of the electron effective mass in GaAs1-xNx thin films measured by thermomagnetic transport phenomena
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DOI：
10.1063/1.1554777
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发表时间：
2003-02
影响因子：
4
通讯作者：
D. Young;J. Geisz;T. Coutts
中科院分区：
文献类型：
--
作者：
D. Young;J. Geisz;T. Coutts
GaAs 1 −xNx薄膜生长在绝缘GaAs衬底上，并进行了温度依赖的电阻率，霍尔，塞贝克和能斯特系数测量。从输运数据计算的态密度、有效质量值随着x从0增加到0.004而从0.084me减小到0.029me。
Thin films of GaAs1−xNx were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, and Nernst coefficient measurements. Density of states, effective-mass values, which are calculated from the transport data, decrease from 0.084me to 0.029me as x increases from 0 to 0.004.