IN2S3:Ag, an ideal buffer layer for thin film solar cells
IN2S3:Ag, an ideal buffer layer for thin film solar cells
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DOI：
10.1007/s10854-008-9591-7
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发表时间：
2009-01-01
影响因子：
2.8
通讯作者：
Vijayakumar, K. P.
中科院分区：
文献类型：
--
作者：
Mathew, Meril;Kartha, C. Sudha;Vijayakumar, K. P.
银的扩散增强了硫化铟(In2S3)薄膜的性能，使其非常适合于光伏应用。沉积在In2S3薄膜上的银层在“原状”状态下扩散到In2S3薄膜中，产生掺杂效应。当掺杂浓度达到一个最佳的百分比时，结晶度和晶粒度都可以得到显著的提高。这一最佳值与膜的厚度和铟、硫的原子比有关。禁带宽度减小到掺杂的最佳值，然后增大。电学研究表明，掺杂导致了电阻率的下降。与未掺杂的样品相比，具有最佳掺杂的样品具有更高的光敏性和更低的电阻。这些结果证明，银扩散硫化铟在结晶度和光敏性方面都优于原始样品。以最佳的银量掺杂β-In2S3薄膜，有利地改变了薄膜的结构和电学性能，使得提供给ITO/CuInS2/In2S3电池结构的银电极本身作为In2S3层的掺杂剂，将电池效率提高到9.5%(John等人)。Sol Energy Mater Sol Cell 89：27,2005)。
Silver diffusion enhanced the properties of Indium sulfide (In2S3) films making it highly suitable buffer layer for photovoltaic applications. Thin layer of silver deposited over In2S3 films diffused into In2S3 films in 'as-deposited' condition itself creating doping effect. A significant enhancement in crystallinity and grain size could be obtained up to an optimum percentage of doping concentration. This optimum value showed dependence on thickness and atomic ratio of indium and sulfur in the film. Band gap decreased up to the optimum value of doping and thereafter it increased. Electrical studies showed a decrease in resistivity due to doping. Sample having the optimum doping was found to be more photosensitive and low resistive when compared with the pristine sample. These results proved that silver diffused indium sulfide surpasses pristine sample for crystallinity and photosensitivity. Doping beta-In2S3 film with optimum amount of silver modified the structural and electrical properties of the films favorably so that the Ag electrodes given to the ITO/CuInS2/In2S3 cell structure itself acted as a doping agent for the In2S3 layer, enhancing the cell efficiency to 9.5% (John et al. Sol Energy Mater Sol Cells 89:27, 2005).