Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
复制标题
DOI：
10.1109/led.2007.901273
复制
发表时间：
2007-08-01
影响因子：
4.9
通讯作者：
Liu, Tsu-Jae King
中科院分区：
文献类型：
--
作者：
Choi, Woo Young;Park, Byung-Gook;Liu, Tsu-Jae King
我们展示了 70 nm n 沟道隧道场效应晶体管 (TFET)，其在室温下的亚阈值摆幅 (SS) 为 52.8 mV/dec。这是第一个实验结果，显示硅基 TFET 的 SS 低于 60 mV/dec。根据仿真结果，栅极氧化物和绝缘体上硅层的厚度分别缩小至 2 和 70 nm。然而，TFET 的开/关电流比仍然低于 MOSFET。为了进一步增加导通电流，可以考虑以下方法：减少有效栅极氧化物厚度、增加源极到沟道掺杂分布的梯度陡度以及使用较低带隙沟道材料。
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, the ON/OFF current ratio of the TFET was still lower than that of the MOSFET. In order to increase the ON current further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel material.