Progress in wide bandgap semiconductor SiC for power devices
Progress in wide bandgap semiconductor SiC for power devices
复制标题
功率器件用宽带隙半导体SiC研究进展
DOI：
10.1109/ispsd.2000.856762
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
H. Matsunami
综述了功率器件用SiC晶体生长的研究进展。介绍了器件工艺的现状。然后，国家的最先进的SiC功率器件进行了描述。讨论了垂直功率MOSFET中决定功率损耗的“导通电阻”，并介绍了SiC MOSFET在提高沟道迁移率方面的最新进展。
The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. "On-resistance" in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities.