Hall effect and electronic structure of Co2FexMn1-xSiCo2FexMn1-xSi films
Hall effect and electronic structure of Co2FexMn1-xSiCo2FexMn1-xSi films
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DOI：
10.1016/j.jmmm.2009.09.048
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发表时间：
2010-03
影响因子：
2.7
通讯作者：
H. Schneider;E. V. Vidal;S. Chadov;G. Fecher;C. Felser;G. Jakob
中科院分区：
文献类型：
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作者：
H. Schneider;E. V. Vidal;S. Chadov;G. Fecher;C. Felser;G. Jakob
超导实验表明，为了在室温下保持半金属性，不仅需要大的能隙，而且还需要远离少数带边缘的费米能。我们将从能带结构计算得到的自旋少数能隙中费米能的位置与霍尔效应实验相关联。作为一个模型系统，我们选择了Co{sub 2}Fe{sub x}Mn{sub 1-x}Si，其中的费米能量被计算为从少数态的价带边缘移动到导带边缘随着x的增加。在高质量的激光烧蚀外延薄膜上，我们观察到掺杂的正常和反常霍尔效应的符号变化。实验数据与用LSDA+DMFT方案计算的能带结构一致。
Tunneling experiments have shown that in order to retain half-metallicity at room temperature not only a large gap is required but also a Fermi energy considerably distant from the minority band edges. We correlate the position of the Fermi energy in the spin minority gap obtained from band structure calculations to Hall effect experiments. As a model system we chose Co{sub 2}Fe{sub x}Mn{sub 1-x}Si, where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x. On high quality laser ablated epitaxial films we observe a sign change of both the normal and the anomalous Hall effect with doping. The experimental data agree with band structure calculations done in the LSDA+DMFT scheme.