Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
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纳米 InGaAs FinFET 中的随机掺杂剂、线边缘粗糙度和栅极功函数变化
DOI：
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发表时间：
2014
影响因子：
3.1
通讯作者：
K. Kalna
中科院分区：
文献类型：
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作者：
N. Seoane;G. Indalecio;E. Comesaña;M. Aldegunde;A. García;K. Kalna
利用Fermi-Dirac统计方法，对亚阈值区域14 nm栅长In0.53Ga0.47As FinFET进行了3种统计变异性的三维量子修正漂移扩散(DD)模拟研究，包括离散随机掺杂(RDS)、线边缘粗糙度(LER)和金属栅功函数(MGW)。本文分别在低(0.05 V)和高(0.6 V)漏极偏压下完成。LER的变异性由均方根幅度(Δ)和相关长度(Λ)表征，而MGW的变异性由金属颗粒尺寸(GS)表征。RD引起的变化σVT=6 mV与在Si SOI FinFET中观察到的相似。LER引起的阈值电压变化(σVT<；；6 mV)与Δ=1 nm时的RD变化相似，且小于Si SOI FinFET的阈值电压变化(18 MV)。对于较大的A，当σ=10 nm和Λ=2 nm时，LER的VT为11 mV，当Δ=20 nm和Λ=3 nm时，LER的VT从19 mV到19 mV。MGW变化是亚阈值特性变化的主要来源，当GS=10 nm时，σVT为106 mV，当GS=3 nm时为43 mV，比等效的TiN金属栅硅FinFET的VT大。
A 3-D quantum-corrected drift-diffusion (DD) simulation study of three sources of statistical variability, including discrete random dopants (RDs), line-edge roughness (LER), and metal gate workfunction (MGW) was performed for a 14-nm gate length In0.53Ga0.47As FinFET in the subthreshold region using Fermi-Dirac statistics. This paper has been done at both low (0.05 V) and high drain biases (0.6 V). The LER variability is characterized by the root mean square amplitude (Δ) and correlation length (Λ), and the MGW variability by the metal grain size (GS). The RD-induced variation σ VT = 6 mV is similar to that observed in Si SoI FinFETs. The LER-induced threshold voltage variations (σ VT <; 6 mV) are similar to the RD variations when Δ = 1 nm, and smaller than the observed in Si SoI FinFETs (18 mV). For larger A, the LER exhibits σ VT ranging from 11 mV when Λ = 10 nm and Δ = 2 nm to 19 mV when Λ = 20 nm and Δ = 3 nm. The MGW variations are the dominant source of variability in the subthreshold characteristics, the σ VT ranges from 106 mV when GS = 10 nm to 43 mV when GS = 3 nm, which is larger than those observed in equivalent TiN metal-gate Si FinFETs.