Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
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DOI：
10.1063/5.0017742
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发表时间：
2020-08-28
影响因子：
3.2
通讯作者：
Dashevsky, Zinovi
中科院分区：
文献类型：
--
作者：
Modak, Sushrut;Chernyak, Leonid;Dashevsky, Zinovi
用电子束感应电流、连续和时间分辨阴极发光技术研究了不同温度下电子注入对少数载流子(空穴)扩散长度和寿命的影响。空穴扩散长度从306 nm增加到347 nm，电子注入电荷密度达到117.5nC/mum(3)，对应的寿命从77ps变化到101ps。扩散长度的延长归因于非平衡载流子寿命的增加，这是由超快时间分辨阴极发光测定的，并与非平衡载流子陷阱在GaN禁带中的镓空位能级上有关。
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306nm to 347nm with an electron injection charge density up to 117.5nC/mu m(3), corresponding to the lifetime changing from 77ps to 101ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.