Static-field-induced states and their manifestation in tunneling ionization dynamics of molecules
Static-field-induced states and their manifestation in tunneling ionization dynamics of molecules
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DOI：
10.1103/physreva.85.023404
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发表时间：
2012-02
影响因子：
2.9
通讯作者：
Weichao Jiang;O. Tolstikhin;Liang-You Peng;Q. Gong
中科院分区：
文献类型：
--
作者：
Weichao Jiang;O. Tolstikhin;Liang-You Peng;Q. Gong
The physical origin and properties of quasistationary static-field-induced states (SFISs) are discussed. SFISs can be supported by a combination of any atomic or molecular potential and an external static electric field and do not have counterparts in the absence of the field. A resonant tunneling ionization (RTI) mechanism of molecules proceeding via SFISs is analyzed for a one-dimensional model. It is shown that SFISs manifest themselves as peaks of the tunneling ionization rate both in static and time-dependent fields in the adiabatic regime. The peaks are located along the RTI ridges in the plane of internuclear distance $R$ and the momentary value of electric field $F$. The RTI via SFISs appears to be one of the general ionization mechanisms of molecules.
