Attosecond band-gap dynamics in silicon
Attosecond band-gap dynamics in silicon
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DOI：
10.1126/science.1260311
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发表时间：
2014-12-12
期刊：
影响因子：
56.9
通讯作者：
Leone, Stephen R.
中科院分区：
文献类型：
--
作者：
Schultze, Martin;Ramasesha, Krupa;Leone, Stephen R.
我们报告了一种低成本、高通量的台式方法，该方法通过产生超高应变率变形，使金属薄层能够以纳米级精度成形。激光冲击压印可以在环境条件下创建小至 10 纳米且具有超光滑表面的三维晶体金属结构。该技术能够成功制造大面积、纵横比高达 5 的均匀纳米图案，用于等离子体和传感应用，以及机械强化纳米结构和金属-石墨烯混合纳米器件。
We report a low-cost, high-throughput benchtop method that enables thin layers of metal to be shaped with nanoscale precision by generating ultrahigh-strain-rate deformations. Laser shock imprinting can create three-dimensional crystalline metallic structures as small as 10 nanometers with ultrasmooth surfaces at ambient conditions. This technique enables the successful fabrications of large-area, uniform nanopatterns with aspect ratios as high as 5 for plasmonic and sensing applications, as well as mechanically strengthened nanostructures and metal-graphene hybrid nanodevices.