60 GHz high resistivity silicon on insulator interdigitated dipole antenna
60 GHz high resistivity silicon on insulator interdigitated dipole antenna
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60 GHz 高电阻率绝缘体硅叉指偶极天线
DOI：
10.1002/mop.25132
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发表时间：
2010
影响因子：
1.5
通讯作者：
F. Ndagijimana
中科院分区：
文献类型：
--
作者：
M. Barakat;C. Delaveaud;F. Ndagijimana
描述了一种集成在SOI上的60 GHz叉指偶极子天线的性能。SOI衬底效应已通过引入叉指结构得到补偿。在60 GHz的8%的带宽上获得了良好的偶极匹配阻抗。背侧衬底金属化已被用于改善辐射特性。提出了一种新的测试方法来测量偶极子的增益方向图。所得的测量辐射效率为80%，在60 GHz时增益约为3 dBi。© 2010 Wiley Periodicals，Inc. Microwave Opt Technol Lett 52：1197 - 1201，2010;在线发表于Wiley InterScience（www.example.com）。DOI 10.1002/mop.25132
The performance of a 60 GHz interdigitated dipole antenna integrated on SOI is described. The SOI substrate effect has been compensated by the introduction of an interdigitated structure. Good dipole matching impedance at 60 GHz over a bandwidth of 8% is obtained. Backside substrate metallization has been used to improve the radiation properties. A novel test method is used to measure the gain patterns of the dipole. The resulting measured radiation efficiency is 80% with a gain around 3 dBi at 60 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1197–1201, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25132