Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN
Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN
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DOI：
10.1149/1.3206916
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发表时间：
2009-11
影响因子：
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通讯作者：
Ho Won Jang;Sanghan Lee;S. Ryu;J. Son;Y. Song;Jong‐Lam Lee
中科院分区：
文献类型：
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作者：
Ho Won Jang;Sanghan Lee;S. Ryu;J. Son;Y. Song;Jong‐Lam Lee
利用同步辐射光电子能谱研究了激光辐照Ga面和N面n-GaN的Al欧姆接触中的界面能带弯曲。两个样品在300°C下退火后显示出增加的带弯曲，但在500°C下退火导致完全相反的带弯曲。这两种不同的行为与退火温度是一致的接触的电性能，并很好地解释了在界面处的N空位的湮灭和在AlN/GaN异质界面处的极化诱导的片电荷的形成，分别。
We investigate interfacial band bendings in Al ohmic contacts to laser-irradiated Ga-face and N-face n-GaN using synchrotron radiation photoemission spectroscopy. Both samples show increased band bendings after annealing at 300°C, but annealing at 500°C leads to completely opposite band bendings. These two different behaviors with annealing temperature are consistent with electrical properties of the contacts and are well explained by the annihilation of N vacancies at the interface and the formation of polarization-induced sheet charges at AIN/GaN heterointerfaces, respectively.