GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
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DOI：
10.1109/led.2020.2984727
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发表时间：
2020-05-01
影响因子：
4.9
通讯作者：
Xing, Huili Grace
中科院分区：
文献类型：
--
作者：
Li, Lei;Nomoto, Kazuki;Xing, Huili Grace
这项工作展示了Si衬底上GaN高电子迁移率晶体管（HEMT）的高频和大功率性能能力。使用T-栅极和n（++）- GaN源极/漏极接触，具有55 nm栅极长度和175 nm源极-漏极间距的InAlN/GaN HEMT显示出最大漏极电流ID，最大跨导为2.8A/mm，峰值跨导为0.66S/mm，正向电流增益截止频率f（T）为250 GHz，最大振荡频率f（MAX）204 GHz。ID、MAX、峰值gm和f（T）- f（MAX）乘积是Si上的GaN HEMT的最佳报道之一，其非常接近于没有背势垒的SiC上的现有技术耗尽型GaN HEMT。鉴于Si的低成本和与CMOS电路的高兼容性，Si上的GaN HEMT被证明对成本敏感的应用特别有吸引力。
This work demonstrates the high-frequency and high-power performance capacity of GaN high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and n(++)- GaN source/drain contacts, the InAlN/GaN HEMT with a gate length of 55 nm and a source-drain spacing of 175 nm shows a maximum drain current ID, MAX of 2.8 A/mm and a peak transconductancegm of 0.66 S/mm. The same HEMT exhibits a forward-current-gain cutoff frequency f(T) of 250 GHz and a maximum frequency of oscillation f(MAX) of 204 GHz. The ID, MAX, peak gm and f(T) - f(MAX) product are among the best reported for GaN HEMTs on Si, which are very close to the state-of-the-art depletion- mode GaN HEMTs on SiC without a back barrier. Given the low cost of Si and the high compatibility with CMOS circuits, GaN HEMTs on Si prove to be particularly attractive for cost-sensitive applications.