Investigation of the diffusion behavior of sodium in Cu(In,Ga)Se2 layers
Investigation of the diffusion behavior of sodium in Cu(In,Ga)Se2 layers
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DOI：
10.1063/1.4871457
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发表时间：
2014-04-21
影响因子：
3.2
通讯作者：
Powalla, Michael
中科院分区：
文献类型：
--
作者：
Laemmle, Anke;Wuerz, Roland;Powalla, Michael
在157 ℃至400 ℃的温度范围内研究了钠在Cu（In，Ga）Se-2（CIGS）层中的扩散。通过二次离子质谱法测量扩散曲线。钠离子从CIGS表面上的氟化钠（NaF）层扩散到CIGS层中。从Na的扩散曲线可以看出，Na的扩散可以区分为沿着晶界的扩散和向晶粒内部的扩散。原子探针断层扫描测量显示，即使在157摄氏度的低温下，钠也会大量扩散到CIGS中。基于这些数据，可以通过Arkenius方程D-Na（V）= 9.7 x 10（-9）exp（-0.36 eV/kBT）cm（2）s（-1）来描述体积中的较慢扩散系数，并且通过D-Na（GB）= 6.5 x 10（-9）exp（-0.21 eV/kBT）cm（2）s（-1）来描述沿晶界的快速扩散沿着。因此，我们建议，钠离子不仅钝化晶界，但也作为掺杂剂在CIGS散装。(C)2014 AIP出版有限责任公司。
Sodium diffusion in Cu(In,Ga)Se-2(CIGS) layers was investigated over a temperature range from 157 degrees C to 400 degrees C. The diffusion profiles were measured by secondary ion mass spectrometry. Sodium ions diffused from a sodium fluoride (NaF) layer on the CIGS surface into the CIGS layer. From Na diffusion profiles, the diffusion along grain boundaries could be distinguished from the diffusion into the grain interior. Atom-probe tomography measurements reveal that even at a low temperature of 157 degrees C bulk diffusion of sodium into CIGS occurs. Based on this data, the slower diffusion coefficient in the volume can be described by the Arrhenius equation D-Na(V) = 9.7 x 10(-9) exp(-0.36 eV/kBT) cm(2) s(-1) and the fast diffusion along the grain boundaries by D-Na(GB) = 6.5 x 10(-9) exp(-0.21 eV/kBT) cm 2 s(-1). Hence, we propose that sodium ions do not only passivate grain boundaries, but also act as dopants in the CIGS bulk. (C) 2014 AIP Publishing LLC.