W-band gallium nitride MMIC amplifiers for cloud Doppler radar arrays
W-band gallium nitride MMIC amplifiers for cloud Doppler radar arrays
复制标题
用于云多普勒雷达阵列的 W 波段氮化镓 MMIC 放大器
DOI：
10.1109/irmmw-thz.2015.7327723
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
D. Gritters
中科院分区：
文献类型：
--
作者：
A. Fung;L. Samoska;P. Kangaslahti;G. Sadowy;Andrew Brown;S. O'Connor;D. Gritters
我们提出了一种努力，在开发W波段（75-110 GHz）的氮化镓（GaN）单片微波集成电路（MMIC）放大器的雷达阵列。由于GaN的高电场击穿能力和异质结构场效应晶体管中良好的2D电子气迁移率，GaN功率放大器在W波段频率下为高输出功率、高效率和小型MMIC形状因子放大器提供最佳性能。GaN低噪声放大器还可以提供大的接收器输入动态范围，降低接收器噪声系数，并且可以更好地容忍来自发射器的输入功率泄漏，而无需保护限制器电路。所有这些特性对于高频阵列是至关重要的，其中设计需要小的电路间距、高效率以减少功耗和发热，以及为了可制造性和可靠性而使电路部件最小化。我们将讨论我们为雷达阵列应用设计、制造和表征的功率、驱动器和低噪声放大器的结果。
We present an effort in developing W-band (75-110 GHz) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers for radar arrays. Due to GaN's high electric field breakdown capability and good 2D electron gas mobility in heterostructure field effect transistors, GaN power amplifiers provide best performance for high output power, high efficiency and small MMIC form factor amplifiers at W-band frequencies. GaN low noise amplifiers can also provide large receiver input dynamic range, reduce receiver noise figure and can be more tolerant of input power leakage from the transmitter without the need of protective limiter circuitry. All these, characteristics are crucial for high frequency arrays where design require small circuit spacings, high efficiency to reduce power consumption and heating, and the minimization of circuit components for manufacturability and reliability. We will discuss results of power, driver and low noise amplifiers that we have designed, fabricated and characterized for radar array applications.