Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
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DOI：
10.1143/apex.5.014101
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发表时间：
2012-01-01
影响因子：
2.3
通讯作者：
Tchernycheva, Maria
中科院分区：
文献类型：
--
作者：
Jacopin, Gwenole;Bugallo, Andres De Luna;Tchernycheva, Maria
利用无催化剂金属有机物气相外延生长的GaN线实现了基于径向p-i-n多量子阱结的单线发光二极管。InxGa 1-xN/GaN非掺杂量子阱系统被涂覆在非极性横向侧壁和极性上表面上。阴极和电致发光（EL）实验提供的证据表明，极性量子阱发射在可见光谱范围内的系统低于非极性量子阱的能量。极性或非极性量子阱的电致发光可以通过改变样品温度和电流注入水平来选择性地激活。(C)2012日本应用物理学会
Single-wire light-emitting diodes based on radial p-i-n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst-free metal organic vapor phase epitaxy. The InxGa1-xN/GaN undoped QW system is coated over both the nonpolar lateral sidewalls and on the polar upper surface. Cathodo- and electroluminescence (EL) experiments provide evidence that the polar QWs emit in the visible spectral range at systematically lower energy than the nonpolar QWs. The EL of the polar or nonpolar QWs can be selectively activated by varying the sample temperature and current injection level. (C) 2012 The Japan Society of Applied Physics